P-channel MOSFET, 30V drain-source voltage, 4.6A continuous drain current, and 0.07 ohm maximum drain-source on-resistance. Features a 71ns fall time, 97ns turn-off delay, and 14ns turn-on delay. This silicon metal-oxide semiconductor FET is housed in a lead-free SOIC package, suitable for surface mounting. Maximum power dissipation is 2.5W, with operating temperatures ranging from -55°C to 150°C.
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International Rectifier IRF7205PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.6A |
| Current Rating | -5.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 70mR |
| Dual Supply Voltage | -30V |
| Fall Time | 71ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 870pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 97ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -30V |
| Width | 4mm |
| RoHS | Compliant |
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