P-channel MOSFET featuring a continuous drain current of -4.6A and a drain-to-source voltage of -30V. This silicon, metal-oxide semiconductor FET offers a maximum on-resistance of 70mΩ and a nominal gate-source voltage of -3V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. The component is supplied in a SOIC package, is RoHS compliant, and lead-free.
PackageSOIC
Current Rating-5.3A
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Technical Specifications
International Rectifier IRF7205TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -4.6A |
| Current Rating | -5.3A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 70mR |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Nominal Vgs | -3V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7205TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7205TRPBF to view detailed technical specifications.
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