International Rectifier
IRF7207TRPBF
Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7207TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 60MR |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 780pF |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7207TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7207TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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