P-channel MOSFET, 12V Drain-Source Voltage (Vdss), 16A Continuous Drain Current (ID), and 7mΩ Drain-Source On Resistance (Rds(on)). Features include a 50ns turn-on delay, 6.5ns turn-off delay, and 30µs fall time. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in an 8-pin SOIC surface-mount case, supplied on tape and reel.
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International Rectifier IRF7210TRPBF* technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | -14V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 7mR |
| Fall Time | 30us |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 17.179nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 6.5ns |
| Turn-On Delay Time | 50ns |
| Width | 4mm |
| RoHS | Compliant |
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