P-channel MOSFET transistor for surface mount applications, featuring a 14V drain-source voltage (Vdss) and 11A continuous drain current (ID). Offers a low 12mΩ drain-source on-resistance (Rds On Max) and operates within a -55°C to 150°C temperature range. This component has a 2.5W power dissipation and is supplied in tape and reel packaging.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 14V |
| Drain-source On Resistance-Max | 12mR |
| Fall Time | 1040ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 8.075nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -600mV |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| Reach SVHC Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 19ns |
| RoHS | Compliant |
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