P-channel silicon MOSFET for surface mounting, featuring a 40V drain-source voltage and a continuous drain current of 6.2A. This metal-oxide semiconductor FET offers a maximum drain-source on-resistance of 41mΩ and a maximum power dissipation of 2.5W. Operating within a temperature range of -55°C to 150°C, it includes a nominal gate-source voltage of -3V and a maximum gate-source voltage of 20V. The component has an input capacitance of 3.22nF and turn-on/turn-off delay times of 24ns and 210ns respectively. Packaged in an SOIC form factor, it is RoHS compliant and lead-free.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.2A |
| Current Rating | -6.2A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 41MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 3.22nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 24ns |
| DC Rated Voltage | -40V |
| Width | 4mm |
| RoHS | Compliant |
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