P-channel silicon MOSFET for surface mounting, featuring a 40V drain-source voltage and a continuous drain current of 6.2A. This metal-oxide semiconductor FET offers a maximum drain-source on-resistance of 41mΩ and a maximum power dissipation of 2.5W. Operating within a temperature range of -55°C to 150°C, it includes a nominal gate-source voltage of -3V and a maximum gate-source voltage of 20V. The component has an input capacitance of 3.22nF and turn-on/turn-off delay times of 24ns and 210ns respectively. Packaged in an SOIC form factor, it is RoHS compliant and lead-free.
PackageSOIC
Current Rating-6.2A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7241TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.2A
Current Rating
-6.2A
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
41MR
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
3.22nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-3V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
210ns
Turn-On Delay Time
24ns
DC Rated Voltage
-40V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7241TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7241TRPBF to view detailed technical specifications.
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