The IRF7303QTRPBF is a 2 N-Channel MOSFET with a maximum drain to source voltage of 30V and a continuous drain current of 4.9A. It features a fall time of 7.7ns and a turn-off delay time of 22ns. The device is packaged in a SOIC package and is suitable for surface mount applications. The IRF7303QTRPBF operates over a temperature range of -55°C to 150°C and is RoHS compliant.
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International Rectifier IRF7303QTRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7.7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 520pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 6.8ns |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7303QTRPBF to view detailed technical specifications.
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