N-Channel MOSFET, 30V Drain-Source Voltage, 4.9A Continuous Drain Current, and 50mΩ Maximum Drain-Source On-Resistance. Features a 2-element silicon Metal-oxide Semiconductor FET design in an SOIC package for surface mounting. Offers a 20V Gate-to-Source Voltage, 520pF Input Capacitance, and a maximum power dissipation of 2W. Operates within a temperature range of -55°C to 150°C, with turn-on delay time of 6.8ns and fall time of 7.7ns.
PackageSOIC
Current Rating4.9A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7303TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.9A
Current Rating
4.9A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
50mR
Fall Time
7.7ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
520pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
22ns
Turn-On Delay Time
6.8ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7303TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7303TRPBF to view detailed technical specifications.
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