N-Channel MOSFET, 30V Drain-Source Voltage, 4.9A Continuous Drain Current, and 50mΩ Maximum Drain-Source On-Resistance. Features a 2-element silicon Metal-oxide Semiconductor FET design in an SOIC package for surface mounting. Offers a 20V Gate-to-Source Voltage, 520pF Input Capacitance, and a maximum power dissipation of 2W. Operates within a temperature range of -55°C to 150°C, with turn-on delay time of 6.8ns and fall time of 7.7ns.
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International Rectifier IRF7303TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.9A |
| Current Rating | 4.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 50mR |
| Fall Time | 7.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 520pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 6.8ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
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