
P-channel MOSFET, 20V drain-source voltage, 4.3A continuous drain current, and 90mΩ maximum drain-source on-resistance. Features include a 12V gate-source voltage, 610pF input capacitance, and 2W power dissipation. This surface-mount device operates from -55°C to 150°C and offers fast switching with 8.4ns turn-on and 33ns fall times. The SOIC package is lead-free and RoHS compliant.
International Rectifier IRF7304PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.3A |
| Current Rating | -4.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 90mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 610pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 8.4ns |
| DC Rated Voltage | -20V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7304PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
