P-channel MOSFET, 20V drain-source voltage, 4.3A continuous drain current, and 90mΩ maximum drain-source on-resistance. Features include a 12V gate-source voltage, 610pF input capacitance, and 2W power dissipation. This surface-mount device operates from -55°C to 150°C and offers fast switching with 8.4ns turn-on and 33ns fall times. The SOIC package is lead-free and RoHS compliant.
PackageSOIC
Current Rating-4.3A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7304PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.3A
Current Rating
-4.3A
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
90mR
Fall Time
33ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
610pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
2W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-700mV
Turn-Off Delay Time
51ns
Turn-On Delay Time
8.4ns
DC Rated Voltage
-20V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7304PBF Datasheet
Download the complete datasheet for International Rectifier IRF7304PBF to view detailed technical specifications.
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