Dual N-Channel Power MOSFET, 30V Vds, 6.5A continuous drain current, and 29mΩ maximum drain-source on-resistance. Features a 2-element silicon Metal-oxide Semiconductor FET design in a lead-free SO-8 package for surface mounting. Operating temperature range from -55°C to 150°C with a maximum power dissipation of 2W. Includes 650pF input capacitance and 8.1ns turn-on delay.
PackageSOIC
Current Rating6.5A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7313PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.5A
Current Rating
6.5A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
29mR
Dual Supply Voltage
30V
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
650pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
2
Power Dissipation
2W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Turn-Off Delay Time
26ns
Turn-On Delay Time
8.1ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7313PBF Datasheet
Download the complete datasheet for International Rectifier IRF7313PBF to view detailed technical specifications.
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