Dual N-Channel Power MOSFET, 30V Vds, 6.5A continuous drain current, and 29mΩ maximum drain-source on-resistance. Features a 2-element silicon Metal-oxide Semiconductor FET design in a lead-free SO-8 package for surface mounting. Operating temperature range from -55°C to 150°C with a maximum power dissipation of 2W. Includes 650pF input capacitance and 8.1ns turn-on delay.
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International Rectifier IRF7313PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.5A |
| Current Rating | 6.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 29mR |
| Dual Supply Voltage | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 650pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 2 |
| Power Dissipation | 2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 8.1ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
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