P-Channel Power MOSFET featuring 20V drain-source voltage and 5.3A continuous drain current. Offers a low 58mΩ maximum drain-source on-resistance. Designed for surface mounting in an 8-pin SOIC package, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 2W. Includes fast switching characteristics with turn-on delay of 15ns and turn-off delay of 42ns.
PackageSOIC
Current Rating-5.3A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7314TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.3A
Current Rating
-5.3A
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
58mR
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
780pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
-700mV
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
42ns
Turn-On Delay Time
15ns
DC Rated Voltage
-20V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7314TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7314TRPBF to view detailed technical specifications.
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