P-Channel Power MOSFET featuring 20V drain-source voltage and 5.3A continuous drain current. Offers a low 58mΩ maximum drain-source on-resistance. Designed for surface mounting in an 8-pin SOIC package, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 2W. Includes fast switching characteristics with turn-on delay of 15ns and turn-off delay of 42ns.
PackageSOIC
Current Rating-5.3A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7314TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Current Rating | -5.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 58mR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 780pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -700mV |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -20V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7314TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7314TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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