P-Channel Power MOSFET featuring 20V drain-source voltage and 5.3A continuous drain current. Offers a low 58mΩ maximum drain-source on-resistance. Designed for surface mounting in an 8-pin SOIC package, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 2W. Includes fast switching characteristics with turn-on delay of 15ns and turn-off delay of 42ns.
Sign in to ask questions about the International Rectifier IRF7314TRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF7314TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Current Rating | -5.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 58mR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 780pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -700mV |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -20V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7314TRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
