Dual P-channel MOSFET, 30V drain-source voltage, 4.9A continuous drain current, and 58mΩ maximum drain-source on-resistance. Features include 710pF input capacitance, 13ns turn-on delay, and 32ns fall time. Operates from -55°C to 150°C with 2W maximum power dissipation. Packaged in a lead-free SOIC (MS-012AA) for surface mounting.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.9A |
| Current Rating | -4.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 58mR |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 710pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Elements | 2 |
| Power Dissipation | 2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | -30V |
| Width | 4mm |
| RoHS | Compliant |
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