Surface mount P-channel MOSFET featuring 4.9A continuous drain current and a 30V drain-source voltage rating. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.058 ohms and a maximum power dissipation of 2W. With a gate-to-source voltage of 20V, it exhibits turn-on delay time of 13ns and turn-off delay time of 34ns. Operating across a temperature range of -55°C to 150°C, this RoHS and REACH SVHC compliant component is housed in a compact SOIC package.
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International Rectifier IRF7316TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.9A |
| Current Rating | -4.9A |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 710pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | -30V |
| Width | 4mm |
| RoHS | Compliant |
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