Dual N-Channel and P-Channel MOSFET featuring 20V drain-source voltage and 6.6A continuous drain current. Offers a low 29mΩ maximum drain-source on-resistance. Operates with a 12V gate-source voltage and boasts a 780pF input capacitance. This surface-mount SOIC package component has a maximum power dissipation of 2W and operates across a -55°C to 150°C temperature range.
PackageSOIC
Current Rating6.6A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7317TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.6A |
| Current Rating | 6.6A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 29mR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 780pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7317TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7317TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.