Dual N-channel and P-channel MOSFET for surface mount applications. Features 30V drain-source voltage, 6.5A continuous drain current, and a maximum on-resistance of 29mΩ. Operates with a gate-source voltage up to 20V and a nominal Vgs of 1V. This silicon, metal-oxide semiconductor FET is housed in a compact SOIC package with dimensions of 5mm length, 4mm width, and 1.5mm height. It offers a maximum power dissipation of 2W and a wide operating temperature range from -55°C to 150°C, with a turn-off delay time of 34ns.
PackageSOIC
Current Rating6.5A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7319TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.5A
Current Rating
6.5A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
29mR
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
650pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1V
Turn-Off Delay Time
34ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7319TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7319TRPBF to view detailed technical specifications.
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