Dual N-channel and P-channel MOSFET for surface mount applications. Features 30V drain-source voltage, 6.5A continuous drain current, and a maximum on-resistance of 29mΩ. Operates with a gate-source voltage up to 20V and a nominal Vgs of 1V. This silicon, metal-oxide semiconductor FET is housed in a compact SOIC package with dimensions of 5mm length, 4mm width, and 1.5mm height. It offers a maximum power dissipation of 2W and a wide operating temperature range from -55°C to 150°C, with a turn-off delay time of 34ns.
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International Rectifier IRF7319TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.5A |
| Current Rating | 6.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 29mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 650pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 34ns |
| Width | 4mm |
| RoHS | Compliant |
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