N-Channel Power MOSFET, 30V Vds, 4.7A continuous drain current, and 98mΩ drain-to-source resistance. Features include a 710pF input capacitance, 32ns fall time, 34ns turn-off delay, and 13ns turn-on delay. This surface-mount device operates from -55°C to 150°C with a maximum power dissipation of 2W. It is RoHS compliant and lead-free, housed in an SOIC package.
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International Rectifier IRF7321D2PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.7A |
| Current Rating | -4.9A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 98mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 710pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FETKY™ Series |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | -30V |
| Width | 4mm |
| RoHS | Compliant |
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