Power Field-Effect Transistor, 5.3A I(D), 20V, 0.062ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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International Rectifier IRF7322D1 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Current Rating | -5.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 780pF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Rds On Max | 62mR |
| RoHS Compliant | No |
| Series | FETKY™ |
| DC Rated Voltage | -20V |
| RoHS | Not Compliant |
Download the complete datasheet for International Rectifier IRF7322D1 to view detailed technical specifications.
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