P-channel MOSFET, 20V drain-source breakdown voltage, 5.3A continuous drain current, and 62mΩ drain-source resistance. Features a 15ns turn-on delay, 42ns turn-off delay, and 49ns fall time. Operates within a -55°C to 150°C temperature range with 2W maximum power dissipation. Packaged in a lead-free SOIC (SO-8) surface-mount component.
International Rectifier IRF7322D1PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Current Rating | -5.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 62mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 780pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 62mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -20V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7322D1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
