P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a continuous drain current of 7.8A and a drain-to-source breakdown voltage of -12V. Surface mountable in an SOIC package, this device offers a maximum power dissipation of 2W and a low on-resistance of 24mR. Operating temperature range spans from -55°C to 150°C, with lead-free and RoHS compliance.
PackageSOIC
Current Rating-7.8A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
International Rectifier IRF7325PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.8A
Current Rating
-7.8A
Drain to Source Breakdown Voltage
-12V
Drain to Source Voltage (Vdss)
12V
Dual Supply Voltage
-12V
Fall Time
180ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
2.02nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
-900mV
Package Quantity
95
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
24mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
240ns
Turn-On Delay Time
9.4ns
DC Rated Voltage
-12V
Width
4.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7325PBF Datasheet
Download the complete datasheet for International Rectifier IRF7325PBF to view detailed technical specifications.
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