P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a continuous drain current of 7.8A and a drain-to-source breakdown voltage of -12V. Surface mountable in an SOIC package, this device offers a maximum power dissipation of 2W and a low on-resistance of 24mR. Operating temperature range spans from -55°C to 150°C, with lead-free and RoHS compliance.
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International Rectifier IRF7325PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.8A |
| Current Rating | -7.8A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Voltage (Vdss) | 12V |
| Dual Supply Voltage | -12V |
| Fall Time | 180ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 2.02nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -900mV |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 240ns |
| Turn-On Delay Time | 9.4ns |
| DC Rated Voltage | -12V |
| Width | 4.05mm |
| RoHS | Compliant |
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