P-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET, offers a continuous drain current of 9.2A and a DC rated voltage of -12V. Featuring a maximum power dissipation of 2W, this surface mount device operates within a temperature range of -55°C to 150°C. Key specifications include an 8V gate-to-source voltage, 3.45nF input capacitance, and turn-on/turn-off delay times of 10ns and 340ns respectively. Packaged on tape and reel, this RoHS compliant component is housed in an SOIC package.
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International Rectifier IRF7329TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.2A |
| Current Rating | -9.2A |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.5mm |
| Input Capacitance | 3.45nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 340ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -12V |
| Width | 4mm |
| RoHS | Compliant |
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