N-Channel, 2-Element, Silicon Metal-oxide Semiconductor FET for surface mount applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 7A. Offers a maximum drain-source on-resistance (Rds On) of 30mR and a gate-source voltage (Vgs) of 12V. Includes a nominal Vgs of 1.2V, input capacitance of 1.34nF, and turn-on delay time of 7.6ns. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Packaged in SOIC on tape and reel, this RoHS compliant component is lead-free.
PackageSOIC
Current Rating7A
MountingSurface Mount
Power2W
Quick Jump:
Technical Specifications
International Rectifier IRF7331TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7A
Current Rating
7A
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
30MR
Fall Time
50ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Input Capacitance
1.34nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1.2V
Number of Elements
2
Package Quantity
4000
Packaging
Tape and Reel
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
30mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
110ns
Turn-On Delay Time
7.6ns
DC Rated Voltage
20V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7331TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7331TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
