N-Channel, 2-Element, Silicon Metal-oxide Semiconductor FET for surface mount applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 7A. Offers a maximum drain-source on-resistance (Rds On) of 30mR and a gate-source voltage (Vgs) of 12V. Includes a nominal Vgs of 1.2V, input capacitance of 1.34nF, and turn-on delay time of 7.6ns. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Packaged in SOIC on tape and reel, this RoHS compliant component is lead-free.
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International Rectifier IRF7331TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 30MR |
| Fall Time | 50ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.34nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Number of Elements | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 7.6ns |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
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