Dual N-Channel and P-Channel MOSFET, 12V Drain-Source Breakdown Voltage, 6.3A Current Rating. Features 34mΩ Max Drain-Source On-Resistance and 2W Max Power Dissipation. Operates from -55°C to 150°C with 25ns fall time and 27ns turn-off delay. Packaged in a lead-free SO-8 surface-mount case.
PackageSO
Current Rating6.3A
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF7338PBF technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
3A
Current Rating
6.3A
Drain to Source Breakdown Voltage
12V
Drain to Source Resistance
34mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
34mR
Fall Time
25ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
8V
Height
1.5mm
Input Capacitance
640pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
95
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
N
Power Dissipation
2W
Rds On Max
34mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
27ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7338PBF Datasheet
Download the complete datasheet for International Rectifier IRF7338PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
