Dual N-Channel and P-Channel MOSFET, 12V Drain-Source Breakdown Voltage, 6.3A Current Rating. Features 34mΩ Max Drain-Source On-Resistance and 2W Max Power Dissipation. Operates from -55°C to 150°C with 25ns fall time and 27ns turn-off delay. Packaged in a lead-free SO-8 surface-mount case.
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International Rectifier IRF7338PBF technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 6.3A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 34mR |
| Fall Time | 25ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.5mm |
| Input Capacitance | 640pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | N |
| Power Dissipation | 2W |
| Rds On Max | 34mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 27ns |
| Width | 4mm |
| RoHS | Compliant |
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