Dual N-Channel MOSFET, 55V Drain-Source Voltage, 4.7A Continuous Drain Current, and 50mΩ Maximum Drain-Source On-Resistance. This surface-mount device features a 2-element silicon Metal-Oxide-Semiconductor FET construction within an SOIC package. Operating temperature range spans -55°C to 150°C with a 2W maximum power dissipation. Key electrical characteristics include 740pF input capacitance and 8.3ns turn-on delay.
PackageSOIC
Current Rating4.7A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7341PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.7A
Current Rating
4.7A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
50mR
Dual Supply Voltage
55V
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
740pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
2W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Turn-Off Delay Time
32ns
Turn-On Delay Time
8.3ns
DC Rated Voltage
55V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7341PBF Datasheet
Download the complete datasheet for International Rectifier IRF7341PBF to view detailed technical specifications.
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