Dual N-Channel MOSFET, 55V Drain-Source Voltage, 4.7A Continuous Drain Current, and 50mΩ Maximum Drain-Source On-Resistance. This surface-mount device features a 2-element silicon Metal-Oxide-Semiconductor FET construction within an SOIC package. Operating temperature range spans -55°C to 150°C with a 2W maximum power dissipation. Key electrical characteristics include 740pF input capacitance and 8.3ns turn-on delay.
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International Rectifier IRF7341PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.7A |
| Current Rating | 4.7A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 50mR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 740pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 8.3ns |
| DC Rated Voltage | 55V |
| Width | 4mm |
| RoHS | Compliant |
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