N-channel MOSFET featuring 55V drain-source voltage and 4.7A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 50mΩ drain-source on-resistance. Designed for surface mounting in an SOIC package, it operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 2W. Key switching characteristics include a 13ns fall time, 8.3ns turn-on delay, and 32ns turn-off delay.
PackageSOIC
Current Rating4.7A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7341TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.7A |
| Current Rating | 4.7A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 50mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 740pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 8.3ns |
| DC Rated Voltage | 55V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7341TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7341TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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