N-channel MOSFET featuring 55V drain-source voltage and 4.7A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 50mΩ drain-source on-resistance. Designed for surface mounting in an SOIC package, it operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 2W. Key switching characteristics include a 13ns fall time, 8.3ns turn-on delay, and 32ns turn-off delay.
International Rectifier IRF7341TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.7A |
| Current Rating | 4.7A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 50mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 740pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 8.3ns |
| DC Rated Voltage | 55V |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
