P-channel MOSFET with a continuous drain current of 3.4A and a drain-to-source voltage of -55V. Features a low on-resistance of 105mΩ at a nominal gate-source voltage of -1V. This surface-mount device offers fast switching speeds with a turn-on delay of 14ns and a fall time of 22ns. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W. The component is RoHS compliant and packaged in a SOIC case.
International Rectifier IRF7342TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | -3.4A |
| Drain to Source Voltage (Vdss) | -55V |
| Drain-source On Resistance-Max | 105mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 690pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -55V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7342TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
