P-channel MOSFET with a continuous drain current of 3.4A and a drain-to-source voltage of -55V. Features a low on-resistance of 105mΩ at a nominal gate-source voltage of -1V. This surface-mount device offers fast switching speeds with a turn-on delay of 14ns and a fall time of 22ns. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W. The component is RoHS compliant and packaged in a SOIC case.
Sign in to ask questions about the International Rectifier IRF7342TRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF7342TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | -3.4A |
| Drain to Source Voltage (Vdss) | -55V |
| Drain-source On Resistance-Max | 105mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 690pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -55V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7342TRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
