Dual N-Channel and P-Channel MOSFET for power switching applications. Features 55V drain-source voltage, 4.7A continuous drain current, and 50mΩ maximum drain-source on-resistance. Operates with a nominal gate-source voltage of 1V and a maximum of 20V. Surface-mount SOIC package with a maximum power dissipation of 2W. Includes fast switching characteristics with turn-on delay of 8.3ns and fall time of 13ns.
PackageSOIC
Current Rating4.7A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7343PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.7A
Current Rating
4.7A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
50MR
Fall Time
13ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
740pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
2
Package Quantity
95
Packaging
Rail/Tube
Power Dissipation
2W
Rds On Max
50mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Series
HEXFET®
Turn-Off Delay Time
43ns
Turn-On Delay Time
8.3ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7343PBF Datasheet
Download the complete datasheet for International Rectifier IRF7343PBF to view detailed technical specifications.
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