Dual N-Channel and P-Channel MOSFET for power switching applications. Features 55V drain-source voltage, 4.7A continuous drain current, and 50mΩ maximum drain-source on-resistance. Operates with a nominal gate-source voltage of 1V and a maximum of 20V. Surface-mount SOIC package with a maximum power dissipation of 2W. Includes fast switching characteristics with turn-on delay of 8.3ns and fall time of 13ns.
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International Rectifier IRF7343PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.7A |
| Current Rating | 4.7A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 50MR |
| Fall Time | 13ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 740pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Power Dissipation | 2W |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Series | HEXFET® |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 8.3ns |
| Width | 4mm |
| RoHS | Compliant |
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