The IRF7343QTRPBF is a surface mount N and P-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2W and a continuous drain current of 3.4A. The device is packaged in a SOIC package and is RoHS compliant.
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International Rectifier IRF7343QTRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Voltage (Vdss) | 55V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 740pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7343QTRPBF to view detailed technical specifications.
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