Dual N-Channel and P-Channel MOSFET featuring 55V drain-source voltage and 4.7A continuous drain current. Offers a low 105mΩ maximum drain-source on-resistance at a nominal Vgs of 1V. Designed for surface mounting in an SOIC package, this silicon metal-oxide semiconductor FET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W. It is RoHS compliant and lead-free.
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International Rectifier IRF7343TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.7A |
| Current Rating | 4.7A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 105mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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