N-Channel Power MOSFET, 30V Vds, 6.5A continuous drain current, and 32mΩ Rds On. This single-element silicon Metal-oxide Semiconductor FET features a 1V threshold voltage and 650pF input capacitance. Designed for surface mounting in an SOIC package, it offers a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C. RoHS and Lead Free compliant.
PackageSOIC
Current Rating6.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7353D1PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.5A
Current Rating
6.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
46mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Fall Time
17ns
Forward Current
2.7A
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
650pF
Lead Free
Lead Free
Length
5mm
Max Forward Surge Current (Ifsm)
11A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
32mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
FETKY™
Threshold Voltage
1V
Turn-Off Delay Time
26ns
Turn-On Delay Time
8.1ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7353D1PBF Datasheet
Download the complete datasheet for International Rectifier IRF7353D1PBF to view detailed technical specifications.
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