N-Channel MOSFET with integrated Schottky diode, featuring 30V drain-source breakdown voltage and 6.5A continuous drain current. Offers low on-resistance of 29mΩ at 10Vgs. Designed for surface mounting in a SOIC package, this component boasts a maximum power dissipation of 2W and operates across a wide temperature range of -55°C to 150°C. Key switching parameters include an 8.1ns turn-on delay and 18ns fall time.
PackageSOIC
Current Rating6.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7353D2TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.5A |
| Current Rating | 6.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 46mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 650pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 29mR |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 8.1ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7353D2TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7353D2TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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