N-Channel Silicon Metal-oxide Semiconductor FET, a dual-element power field-effect transistor featuring 80V drain-to-source voltage and 3.6A continuous drain current. This surface-mount device offers a low on-resistance of 0.073 ohms and a maximum power dissipation of 2W. Key switching characteristics include a 9ns turn-on delay and a 17ns fall time, with input capacitance at 660pF. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is housed in a compact SOP-8 package.
International Rectifier IRF7380QPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 80V |
| Dual Supply Voltage | 80V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 660pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 2 |
| Packaging | Rail/Tube |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 9ns |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
