IRF7380QPBF

N-Channel Silicon Metal-oxide Semiconductor FET, a dual-element power field-effect transistor featuring 80V drain-to-source voltage and 3.6A continuous drain current. This surface-mount device offers a low on-resistance of 0.073 ohms and a maximum power dissipation of 2W. Key switching characteristics include a 9ns turn-on delay and a 17ns fall time, with input capacitance at 660pF. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is housed in a compact SOP-8 package.