The IRF7380QTRPBF is a 2 N-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2W and is RoHS compliant. The device features a fall time of 17ns and a turn-off delay time of 41ns. It is a surface mount device with a package quantity of 1 and is packaged in tape and reel. The IRF7380QTRPBF has a maximum drain to source voltage of 80V and a maximum gate to source voltage of 20V.
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7380QTRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 17ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 660pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 73mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7380QTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7380QTRPBF to view detailed technical specifications.
No datasheet is available for this part.