N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in an SOP-8 package. Features a 80V drain-source voltage (Vdss) and a continuous drain current (ID) of 3.6A. Offers a low drain-source on-resistance of 73mΩ at a nominal gate-source voltage (Vgs) of 4V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Includes a turn-on delay time of 9ns and a turn-off delay time of 41ns.
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7380TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 73MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 660pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 9ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7380TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7380TRPBF to view detailed technical specifications.
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