Dual N-Channel and P-Channel MOSFET featuring 30V drain-source voltage and 7.3A continuous drain current. Offers a low 29mΩ maximum drain-source on-resistance at a nominal 1V gate-source voltage. This surface-mount device, housed in an SOIC package, operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Key electrical characteristics include 650pF input capacitance and a 34ns turn-off delay time.
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International Rectifier IRF7389TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.3A |
| Current Rating | 7.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 29mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 650pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 34ns |
| Width | 4mm |
| RoHS | Compliant |
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