International Rectifier
IRF740
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Current Rating10A
Power125W
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Technical Specifications
International Rectifier IRF740 technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 550mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 125W |
| RoHS Compliant | No |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF740 Datasheet
Download the complete datasheet for International Rectifier IRF740 to view detailed technical specifications.
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