P-channel MOSFET featuring 20V drain-source voltage and 6.7A continuous drain current. Offers a low 40mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET is housed in a lead-free SOIC package for surface mounting. Key specifications include 1.5nF input capacitance and 2.5W maximum power dissipation.
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International Rectifier IRF7404PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.7A |
| Current Rating | -6.7A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 40mR |
| Dual Supply Voltage | -20V |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -700mV |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -20V |
| Width | 4mm |
| RoHS | Compliant |
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