P-channel MOSFET, 30V drain-source voltage, 5.8A continuous drain current, and 45mΩ maximum drain-source on-resistance. This silicon metal-oxide semiconductor FET features a -1V threshold voltage and operates within a -55°C to 150°C temperature range. With a 2.5W power dissipation and 1.1nF input capacitance, it is designed for surface mounting in an SOIC package. The component offers 16ns turn-on and 45ns turn-off delay times.
PackageSOIC
Current Rating-5.8A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7406PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.8A |
| Current Rating | -5.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 45mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | -30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7406PBF Datasheet
Download the complete datasheet for International Rectifier IRF7406PBF to view detailed technical specifications.
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