P-channel MOSFET, 30V drain-source voltage, 5.8A continuous drain current, and 45mΩ maximum drain-source on-resistance. This silicon metal-oxide semiconductor FET features a -1V threshold voltage and operates within a -55°C to 150°C temperature range. With a 2.5W power dissipation and 1.1nF input capacitance, it is designed for surface mounting in an SOIC package. The component offers 16ns turn-on and 45ns turn-off delay times.
PackageSOIC
Current Rating-5.8A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7406PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.8A
Current Rating
-5.8A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
45mR
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.1nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-1V
Turn-Off Delay Time
45ns
Turn-On Delay Time
16ns
DC Rated Voltage
-30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7406PBF Datasheet
Download the complete datasheet for International Rectifier IRF7406PBF to view detailed technical specifications.
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