P-channel MOSFET, 30V drain-source voltage, 5.8A continuous drain current, and 45mΩ maximum drain-source on-resistance. This silicon metal-oxide semiconductor FET features a -1V threshold voltage and operates within a -55°C to 150°C temperature range. With a 2.5W power dissipation and 1.1nF input capacitance, it is designed for surface mounting in an SOIC package. The component offers 16ns turn-on and 45ns turn-off delay times.
Sign in to ask questions about the International Rectifier IRF7406PBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF7406PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.8A |
| Current Rating | -5.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 45mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | -30V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7406PBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
