N-channel MOSFET with 30V drain-source breakdown voltage and 13A continuous drain current. Features low 10mΩ drain-to-source resistance (Rds On Max) and 1.21nF input capacitance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in an 8-pin SOIC surface-mount case, supplied on tape and reel. Switching characteristics include a 3.8ns fall time, 8.7ns turn-on delay, and 11ns turn-off delay.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7413ZGTRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
30V
Fall Time
3.8ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.21nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
10mR
Series
HEXFET®
Turn-Off Delay Time
11ns
Turn-On Delay Time
8.7ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7413ZGTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7413ZGTRPBF to view detailed technical specifications.
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