N-channel Power MOSFET, Metal-oxide Semiconductor FET, featuring a 30V Drain-source voltage (Vdss) and 13A continuous drain current (ID). This surface mount component offers a low drain-source on-resistance of 10mΩ (max) and operates with a nominal gate-source voltage (Vgs) of 1.8V, with a maximum Vgs rating of 20V. Key switching characteristics include an 8.7ns turn-on delay, 11ns turn-off delay, and a 3.8ns fall time. Housed in a compact SOIC package, it supports a wide operating temperature range from -55°C to 150°C and is RoHS compliant.
PackageSOIC
Current Rating13A
MountingSurface Mount
Quick Jump:
Technical Specifications
International Rectifier IRF7413ZTRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
13A
Current Rating
13A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
10MR
Fall Time
3.8ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.21nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1.8V
Packaging
Cut Tape
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.8V
Turn-Off Delay Time
11ns
Turn-On Delay Time
8.7ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7413ZTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7413ZTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
