N-channel Power MOSFET, Metal-oxide Semiconductor FET, featuring a 30V Drain-source voltage (Vdss) and 13A continuous drain current (ID). This surface mount component offers a low drain-source on-resistance of 10mΩ (max) and operates with a nominal gate-source voltage (Vgs) of 1.8V, with a maximum Vgs rating of 20V. Key switching characteristics include an 8.7ns turn-on delay, 11ns turn-off delay, and a 3.8ns fall time. Housed in a compact SOIC package, it supports a wide operating temperature range from -55°C to 150°C and is RoHS compliant.
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International Rectifier IRF7413ZTRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 10MR |
| Fall Time | 3.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.21nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 8.7ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
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