P-Channel Power MOSFET for surface mount applications. Features a continuous drain current of -10A and a drain-source voltage of -30V. Offers a low on-resistance of 20mΩ at a nominal gate-source voltage of -1V. Designed with a single silicon element in an SOIC package, operating from -55°C to 150°C. RoHS compliant and lead-free.
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International Rectifier IRF7416PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -10A |
| Current Rating | -10A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 20mR |
| Dual Supply Voltage | -30V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | -30V |
| Width | 4mm |
| RoHS | Compliant |
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