P-Channel Power MOSFET for surface mount applications. Features a continuous drain current of -10A and a drain-source voltage of -30V. Offers a low on-resistance of 20mΩ at a nominal gate-source voltage of -1V. Designed with a single silicon element in an SOIC package, operating from -55°C to 150°C. RoHS compliant and lead-free.
PackageSOIC
Current Rating-10A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7416PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
-10A
Current Rating
-10A
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
20mR
Dual Supply Voltage
-30V
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.7nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-1V
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.5W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Turn-Off Delay Time
59ns
Turn-On Delay Time
18ns
DC Rated Voltage
-30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7416PBF Datasheet
Download the complete datasheet for International Rectifier IRF7416PBF to view detailed technical specifications.
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