P-channel MOSFET featuring 12V drain-source breakdown voltage and 11.5A continuous drain current. Offers a low 14mΩ drain-source on-resistance. This surface-mount device operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 2.5W. Includes a 2.5W power dissipation rating and is RoHS compliant.
PackageSOIC
Current Rating-11.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
International Rectifier IRF7420PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11.5A |
| Current Rating | -11.5A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 14MR |
| Dual Supply Voltage | -12V |
| Fall Time | 225ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.5mm |
| Input Capacitance | 3.529nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -900mV |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 291ns |
| Turn-On Delay Time | 8.8ns |
| DC Rated Voltage | -12V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7420PBF Datasheet
Download the complete datasheet for International Rectifier IRF7420PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.