N-Channel Power MOSFET, 30V Drain-Source Voltage, 5.8A Continuous Drain Current, and 35mΩ Rds On. This silicon, metal-oxide semiconductor FET features a 4V threshold voltage and 4V nominal gate-source voltage, with a maximum gate-source voltage of 20V. It offers a maximum power dissipation of 2.5W and operates within a temperature range of -55°C to 150°C. Packaged in a lead-free SOIC (MS-012AA) for surface mounting, this single-element transistor is supplied on tape and reel.
PackageSOIC
Current Rating5.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7421D1PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.8A |
| Current Rating | 5.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 16ns |
| Forward Current | 4A |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Max Forward Surge Current (Ifsm) | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 6.7ns |
| DC Rated Voltage | 30V |
| Width | 4.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7421D1PBF Datasheet
Download the complete datasheet for International Rectifier IRF7421D1PBF to view detailed technical specifications.
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