N-channel power MOSFET featuring 30V drain-source breakdown voltage and 5.8A continuous drain current. This surface-mount device offers a low 35mΩ drain-source on-resistance and 510pF input capacitance. Operating across a wide temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 2W and is supplied in tape and reel packaging.
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International Rectifier IRF7421D1TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.8A |
| Current Rating | 5.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 6.7ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7421D1TRPBF to view detailed technical specifications.
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