P-channel power MOSFET, 20V drain-source breakdown voltage, 4.3A continuous drain current, and 90mΩ drain-source resistance. Features include a 4V gate-source threshold voltage, 610pF input capacitance, and fast switching times with 8.4ns turn-on delay and 33ns fall time. This surface-mount device is housed in an SOIC package, rated for 2W power dissipation, and is RoHS compliant.
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International Rectifier IRF7422D2PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.3A |
| Current Rating | -4.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | -20V |
| Fall Time | 33ns |
| Forward Current | 4A |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 610pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Forward Surge Current (Ifsm) | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 8.4ns |
| DC Rated Voltage | -20V |
| Width | 4mm |
| RoHS | Compliant |
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