P-channel power MOSFET, 20V drain-source breakdown voltage, 4.3A continuous drain current, and 90mΩ drain-source resistance. Features include a 4V gate-source threshold voltage, 610pF input capacitance, and fast switching times with 8.4ns turn-on delay and 33ns fall time. This surface-mount device is housed in an SOIC package, rated for 2W power dissipation, and is RoHS compliant.
PackageSOIC
Current Rating-4.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
International Rectifier IRF7422D2PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.3A
Current Rating
-4.3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
-20V
Fall Time
33ns
Forward Current
4A
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
610pF
Lead Free
Lead Free
Length
5mm
Max Forward Surge Current (Ifsm)
20A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
FETKY™
Threshold Voltage
4V
Turn-Off Delay Time
51ns
Turn-On Delay Time
8.4ns
DC Rated Voltage
-20V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7422D2PBF Datasheet
Download the complete datasheet for International Rectifier IRF7422D2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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