P-channel power MOSFET featuring a 20V drain-source breakdown voltage and 4.3A continuous drain current. This surface-mount device offers a low 90mΩ drain-source on-resistance. Key specifications include a 610pF input capacitance, 33ns fall time, and 8.4ns turn-on delay. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 2W and is supplied in a tape and reel package.
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International Rectifier IRF7422D2TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.3A |
| Current Rating | -4.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 90mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 610pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 8.4ns |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
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