P-channel power MOSFET featuring a -20V drain-source voltage and -15A continuous drain current. Offers a low 8.2mΩ maximum drain-source on-resistance at a nominal 12V gate-source voltage. This surface-mount device, housed in an SOIC package, boasts a maximum power dissipation of 2.5W and operates across a temperature range of -55°C to 150°C. Includes a turn-on delay time of 13ns and a turn-off delay time of 230ns.
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7425TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -15A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 8.2MR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 7.98nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 12V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 230ns |
| Turn-On Delay Time | 13ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7425TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7425TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.