International Rectifier
IRF7433TRPBF
Power Field-Effect Transistor, 8.9A I(D), 12V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7433TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.9A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 24MR |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.877nF |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7433TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7433TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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