Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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International Rectifier IRF7450TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | 2.5A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 170mR |
| Input Capacitance | 940pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 170mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
No datasheet is available for this part.
