Power Field-Effect Transistor, 12A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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International Rectifier IRF7459TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 9MR |
| Dual Supply Voltage | 20V |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.48nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 2V |
| RoHS | Compliant |
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