IRF7464

Power Field-Effect Transistor, 1.2A I(D), 200V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

PackageSOIC

MountingSurface Mount

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International Rectifier IRF7464 technical specifications.

Package/Case

SOIC

Continuous Drain Current (ID)

1.2A

Drain to Source Voltage (Vdss)

200V

Input Capacitance

280pF

Max Power Dissipation

2.5W

Mount

Surface Mount

Package Quantity

Packaging

Rail/Tube

Rds On Max

730mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.